| PART |
Description |
Maker |
| FJP5027 FJP5027TU FJP5027R FJP5027RTU |
Wide SOA
High Speed Switching
High Voltage and High Reliability
NPN Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| BUX81 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
| GP02-60 GP02-35 GP02-40 GP02-50 |
0.2 Amp High Voltage Silicon Rectifier 3500 - 6000 Volts 0.2 A, 4000 V, SILICON, SIGNAL DIODE, DO-15
OSC 5V SMT PLAS 14X9 CMOS 0.2 A, 5000 V, SILICON, SIGNAL DIODE, DO-15
0.2 Amp High Voltage Silicon Rectifier 3500 - 6000 Volts 0.2 A, 6000 V, SILICON, SIGNAL DIODE, DO-15
|
Micro Commercial Compon...
MCC[Micro Commercial Components]
Micro Commercial Components Corp.
Micro Commercial Components, Corp.
|
| 2SC2369 2SC1560 2SC1988 2SC2570 NE02100 NE02103 NE |
NPN SILICON HIGH FREQUENCY TRANSISTOR
NPN SILICON HIGH FREQUNY TRANSISTOR NPN硅晶体管高FREQUNY
NPN SILICON HIGH FREQUNY TRANSISTOR NPN硅晶体管FREQUNY
|
NEC[NEC]
NEC Corp.
Honeywell International, Inc.
NEC, Corp.
|
| BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS1 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
Latest Silicon Discretes - Switching Diode for high speed switching
Silicon Switching Diode 硅开关二极管
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| ZHCS500 UZHCS500 ZHCS500TA |
DIODE SCHOTTKY SOT-23
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT?/a>
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT”
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT
SOT23 SILICON HIGH CURRENT
0.5 A, SILICON, SIGNAL DIODE
High Current Schottky Diode
|
ZETEX[Zetex Semiconductors]
Diodes Incorporated
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| BC638ZL1 BC636-16ZL1 BC640 BC640ZL1 BC636 BC636-16 |
Transistor Silicon Plastic PNP
High Current Transistors PNP Silicon
High Current Transistors(PNP Silicon)
High Current Transistors 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ONSEMI[ON Semiconductor]
|
| BAS20 BAS19 BAS21 Q62702-A95 Q62702-A113 Q62702-A7 |
Silicon Switching Diodes (High-speed/ high-voltage switch)
From old datasheet system
SILICON SWITCHING DIODES (HIGH-SPEED, HIGH-VOLTAGE SWITCH)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MC33982 MC33982PNA MC33982PNA_R2 MC33982PNA/R2 |
Single Intelligent High-Current Self-Protected Silicon High-Side Switch
|
MOTOROLA[Motorola, Inc]
|
| 3W 3RW3 3RW2 3W2 3W3 3W2.5 |
HIGH VOLTAGE, HIGH CURRENT, FAST RECOVERY SILICON RECTIFIER DIODES
|
Electronic Devices, Inc.
|
| 2SK2347 |
N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications
|
SANYO
|
